RT pulsed operation of metamorphic VCSEL at 1.55µm
- 29 October 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (22) , 2133-2135
- https://doi.org/10.1049/el:19981508
Abstract
An all molecular beam epitaxy grown 1.55 µm vertical cavity surface-emitting laser is presented which comprises an InP/InGaAsP bottom mirror, multiple quantum well active layer and a GaAlAs/GaAs metamorphic top mirror directly grown on the InP cavity. This structure takes advantage of the intrinsic optical, electrical and thermal properties of GaAlAs/GaAs material and is compatible with a 2 in process. Such an approach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the optical network.Keywords
This publication has 7 references indexed in Scilit:
- InP-based 1.5 µm vertical cavity surface emittinglaser with epitaxially grown defect-free GaAs-based distributed Bragg reflectorsElectronics Letters, 1998
- GaAlAs/GaAs metamorphic Bragg mirror for long wavelengthVCSELsElectronics Letters, 1998
- Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 µm vertical-cavity lasersElectronics Letters, 1997
- Submilliamp 1.3 µm vertical-cavity surface-emittinglasers with threshold current density of < 500 A/cm 2Electronics Letters, 1997
- Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1997
- Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflectorIEEE Photonics Technology Letters, 1996
- Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasersApplied Physics Letters, 1993