Electron Microscope Studies Of Vpe Gainas Layer Structures Suitable For Use As Infrared Leds
- 1 January 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (1) , 117-126
- https://doi.org/10.1111/j.1365-2818.1980.tb00254.x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- X-ray topography and diode efficiency of vapour grown GaAs1−xPx layersJournal of Crystal Growth, 1976
- Characterization of vapor grown (001) GaAs1−xPx layers by selective photo-etchingJournal of Crystal Growth, 1975
- Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopyJournal of Crystal Growth, 1975
- Interfacial lattice mismatch effects in III–V compoundsJournal of Crystal Growth, 1975
- Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAsJournal of Electronic Materials, 1975
- Like-sign asymmetric dislocations in zinc-blende structureApplied Physics Letters, 1972
- Some observations on the dislocation etching of GaAs1-χPχ epitaxial layersJournal of Crystal Growth, 1971
- Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχJournal of Crystal Growth, 1971
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Dislocations and their Relation to Irregularities in Zinc-Diffused GaAsP p-n JunctionsJournal of Applied Physics, 1968