Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications

This publication has 12 references indexed in Scilit:

• A new flash-erase EEPROM cell with a sidewall select-gate on its source side
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• MOSFET interface state densities of different technologies
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
  IEEE Transactions on Electron Devices, 1989
• Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
  IEEE Transactions on Electron Devices, 1986
• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique
  IEEE Electron Device Letters, 1986
• Hot-electron and hole-emission effects in short n-channel MOSFET's
  IEEE Transactions on Electron Devices, 1985
• Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
  IEEE Transactions on Electron Devices, 1985
• EPROM Cell with high gate injection efficiency
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Hot-electron injection into the oxide in n-channel MOS devices
  IEEE Transactions on Electron Devices, 1981