Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane
- 1 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 158 (4) , 480-490
- https://doi.org/10.1016/0022-0248(95)00464-5
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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