The role of carrier gases in the epitaxial growth of β-SiC on Si by CVD
- 31 August 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (1-2) , 120-126
- https://doi.org/10.1016/0022-0248(91)90016-x
Abstract
No abstract availableKeywords
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