Effect of Co60 Gamma Radiation on Noise Parameters of Bipolar Transistors
- 1 December 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 18 (6) , 404-409
- https://doi.org/10.1109/tns.1971.4326461
Abstract
Bipolar-transistor noise current and noise voltage were examined in the range from 100 Hz to 20 kHz as a function of γ-dose from γ= 105 Rad)Si) to γ = 1.1 × 107 Rad(Si). A variety of geometries of both NPN and PNP types were utilized. Substantial changes in inT were found for all device types but vnT changed in only certain device types.Keywords
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