On the mechanism for microwave amplification in ``supercritically'' doped n-GaAs
- 15 February 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (4) , 162-164
- https://doi.org/10.1063/1.1654596
Abstract
Good agreement is obtained between experiment and numerical calculations on supercritically doped n‐GaAs transferred electron amplifiers. When moderate doping depletions near one electrode are included in the calculations, the results correctly predict the small‐signal impedance and current‐voltage characteristics, including the bias‐induced stable‐unstable‐stable regimes. The results demonstrate the dominant role played by the electrodes in controlling the behavior of transferred electron amplifiers.Keywords
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