Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon
- 1 January 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 260 (1-3) , 37-43
- https://doi.org/10.1016/0039-6028(92)90016-y
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- In situ study of the growth of hydrogenated amorphous silicon by infrared ellipsometryApplied Physics Letters, 1991
- Real-time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopyApplied Physics Letters, 1990
- Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon filmsJournal of Applied Physics, 1988
- Silicon-silicon dioxide interface: An infrared studyJournal of Applied Physics, 1987
- Infrared study of the kinetics of oxidation in porous amorphous siliconJournal of Applied Physics, 1986
- Oxidation of plasma-deposited hydrogenated amorphous siliconThin Solid Films, 1985
- Oxidation of glow discharge a-Si:HSolid-State Electronics, 1982
- Oxidation studies of hydrogenated amorphous siliconSurface Science, 1982
- Oxidation and interface states in a-Si: HPhilosophical Magazine Part B, 1981
- Porosity and oxidation of amorphous silicon films prepared by evaporation, sputtering and plasma-depositionSolar Energy Materials, 1979