Surface restoration of oxygen-implanted silicon

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Abstract
The effects of oxygen implantation and annealing conditions on surface crystal restoration were studied as a function of temperature, by means of infrared spectroscopy, ultraviolet reflectance, electron microscopy, and secondary ion mass spectroscopy analysis. The oxygen interstitial absorption band shifts from 1020 to 1100 cm−1 with annealing temperature, and, the structure of the buried oxide changes with annealing condition. The restoration process is enhanced by defects formed during implantation. The binding energy of the oxygen‐vacancy complex was found to be (0.48±0.03) eV from kinetic analysis. Low‐temperature implanation combined with a long‐term single‐stage annealing is found to be suitable for good surface restoration.