High-reflectance AlPSb/GaPSb distributed Bragg reflectormirrors on InP grown by gas-source molecular beam epitaxy

17 February 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (4) , 314-315
https://doi.org/10.1049/el:19940230

Abstract

Large relractive-index difference, 1.55 µm distributed Bragg reflectors, using AlPSb and GaPSb lattice matched to InP, are demonstrated. This is the first report of AlPSb/GaPSb quarter-wave distributed Bragg reflectors. This mirror structure will be useful for InP-based surface-emitting laser applications at long wavelengths.

Keywords

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