Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy
- 25 September 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (10) , 2658-2661
- https://doi.org/10.1109/ted.2006.882399
Abstract
The authors demonstrate the potential of confocal micro-Raman spectroscopy to enable three-dimensional (3-D) thermal analysis of solid state devices. This is illustrated on a flip-chip mounted AlGaN/GaN heterostructure field-effect transistor. To better understand its heat dissipation and for device optimization, it is desirable to know temperature distribution not only in the active device area, but also in the bulk substrate. This cannot be achieved using traditional thermal imaging techniques. 3-D thermal imaging was demonstrated by probing the temperature dependent Raman shift of phonons at different depths within the bulk substrate using confocal micro-Raman spectroscopy. The heatsinking through the metal bumps connecting the active device area to the flip-chip carrier is illustrated. Experimental temperature results are in reasonably good agreement with 3-D finite difference simulationsKeywords
This publication has 10 references indexed in Scilit:
- Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip DesignIEEE Transactions on Electron Devices, 2006
- Integrated Raman - IR Thermography on AlGaN/GaN TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layerJournal of Applied Physics, 2005
- Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on SiliconIEEE Transactions on Electron Devices, 2005
- Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETsMRS Proceedings, 2005
- Thermal Modeling and Measurement of AlGaN–GaN HFETs Built on Sapphire and SiC SubstratesIEEE Transactions on Electron Devices, 2004
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopyApplied Physics Letters, 2003
- Progress in High-Power, High Frequency AlGaN/GaN HEMTsPhysica Status Solidi (a), 2002
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopyIEEE Electron Device Letters, 2002
- Modeling and Measuring the Effect of Refraction on the Depth Resolution of Confocal Raman MicroscopyApplied Spectroscopy, 2000