Ion-Beam-Assisted Etching in Ga+/GaAs/Cl2 System
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6S)
- https://doi.org/10.1143/jjap.32.3051
Abstract
We have investigated the characteristics of ion-beam-assisted etching of GaAs by continuous and pulsed Ga+ beam irradiation in Cl2 ambient. A rate equation model was proposed to explain the measured etch yield. Due to pulsed beam irradiation, the etch yield increased to 500 atoms/ion with decreasing pulse duty ratio. This increase was explained by the accumulation of GaCl3 on the surface while the ion beam is off based on the rate equation model.Keywords
This publication has 26 references indexed in Scilit:
- Reactions of Cl with GaAs: A theoretical understanding of GaAs-surface etchingPhysical Review B, 1991
- Optical system for a low-energy focused ion beamJournal of Vacuum Science & Technology B, 1989
- Planar vias through Si3N4 fabricated by focused ion beam implantationJournal of Vacuum Science & Technology B, 1988
- Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion BeamsJapanese Journal of Applied Physics, 1987
- Si Etching with a Hot SF6 Beam and the Etching MechanismJapanese Journal of Applied Physics, 1987
- Cluster ions from keV-energy ion and atom bombardment of frozen gasesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas PressureJapanese Journal of Applied Physics, 1984
- Ion enhanced gas-surface reactions: A kinetic model for the etching mechanismSurface Science, 1981
- Chemisorption geometry on cleaved III-V surfaces: Cl on GaAs, GaSb, and InSbPhysical Review B, 1979
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977