Surface reaction mechanism of SiCl2 with carrier gas H2 in silicon vapor phase epitaxial growth
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 499-507
- https://doi.org/10.1016/0022-0248(91)90227-v
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Theoretical studies of Si vapor-phase epitaxial growth by Iab initioP molecular-orbital calculationsPhysical Review B, 1990
- SiCl2(X̃1A1 → Ã1B1) photo-assisted epitaxy of siliconJournal of Crystal Growth, 1990
- Charge transfer adsorption in silicon vapor-phase epitaxial growthJournal of Applied Physics, 1988
- Selective silicon epitaxial growth for device-isolation technologyMicroelectronic Engineering, 1986
- Crystalline Defects in Selectively Epitaxial Silicon LayersJapanese Journal of Applied Physics, 1983
- Vapour growth mechanism of silicon layers by dichlorosilane decompositionJournal of Crystal Growth, 1983
- Selective Silicon Epitaxy Using Reduced Pressure TechniqueJapanese Journal of Applied Physics, 1982
- Epitaxial Deposition of Silicon in Deep GroovesJournal of the Electrochemical Society, 1975
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- Selective Epitaxial Deposition of SiliconNature, 1962