The grain size dependence of the mobility and lifetime in chemical vapor deposited diamond photoconductive switches
- 1 February 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (3) , 1730-1733
- https://doi.org/10.1063/1.366891
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Photoconductive properties of chemical vapor deposited diamond switch under high electric field strengthApplied Physics Letters, 1995
- Thickness dependence of the electrical characteristics of chemical vapor deposited diamond filmsApplied Physics Letters, 1994
- 1.4 ps rise-time high-voltage photoconductive switchingApplied Physics Letters, 1991
- Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InPApplied Physics Letters, 1990