Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 2103-2108
- https://doi.org/10.1109/3.234475
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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