Time dependence of stress and hillock distributions during electromigration in thin metal film interconnections
- 28 February 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 23 (1) , 15-18
- https://doi.org/10.1016/0921-5107(94)90271-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Stress and electromigration in Al-lines of integrated circuitsPublished by Elsevier ,2003
- On the theory of steady-state electromigration in thin filmsApplied Physics Letters, 1992
- Degradation and subsequent healing by electromigration in Al-1 wt % Si thin filmsJournal of Applied Physics, 1992
- Mechanisms of Stress-Induced and Electromigration-Induced Damage in Passivated Narrow Metallizations on Rigid SubstratesMRS Bulletin, 1992
- The effect of anodization on the electromigration drift velocity in aluminum filmsJournal of Applied Physics, 1989
- Reduced aluminium electromigration in future integrated circuits — A problem of test procedure and threshold mechanismsThin Solid Films, 1989
- The threshold current density and incubation time to electromigration in gold filmsThin Solid Films, 1977
- Erratum: Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1977
- Measurement of stress gradients generated by electromigrationApplied Physics Letters, 1977
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976