A high-performance SiGe-Si multiple-quantum-well heterojunction phototransistor
- 29 September 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (10) , 643-645
- https://doi.org/10.1109/led.2003.817870
Abstract
A novel phototransistor is fabricated by placing Si/sub 0.5/Ge/sub 0.5//Si multiple quantum wells (MQWs) between the base and the collector of Si-SiGe heterojunction bipolar transistors (HPT). The SiGe-Si MQWs are used as a light absorption layer. The cutoff frequency (f/sub T/) and maximum oscillation frequency (f/sub MAX/) of the phototransistor are found to be 25 GHz, which is suitable for gigabit integrated circuit. The responsivity of 1.3 A/W (external quantum efficiency = 194%) and the pulsewidth of 184 ps at a wavelength of 850 nm are observed. The excellent electrical and optical performance of the Si-SiGe MQW phototransistor makes it attractive for future Si-based optoelectronic integrated circuit applications.Keywords
This publication has 14 references indexed in Scilit:
- High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Optoelectronic detectors and receivers: speed and sensitivity limitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodesElectronics Letters, 2002
- A high-speed, high-sensitivity silicon lateral trench photodetectorIEEE Electron Device Letters, 2002
- Ultrahigh-speed InP/InGaAs DHPTs for OEMMICsIEEE Transactions on Microwave Theory and Techniques, 2001
- Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technologyIEEE Microwave and Guided Wave Letters, 1998
- A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC'sIEEE Transactions on Electron Devices, 1997
- A VLSI-compatible high-speed silicon photodetector for optical data link applicationsIEEE Transactions on Electron Devices, 1996
- Chapter 5 Phototransistors for Lightwave CommunicationsPublished by Elsevier ,1985