Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides
- 7 May 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (11) , 1787-1798
- https://doi.org/10.1016/s0038-1101(02)00151-x
Abstract
No abstract availableKeywords
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