Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (7) , 362-364
- https://doi.org/10.1109/55.847381
Abstract
We report that voltage acceleration of time- or charge-to-breakdown is insensitive to temperature variations over a wide range of temperature (30 to 200/spl deg/C) for oxides below 3 nm, regardless of oxide process, injection polarity or device type (NFET, PFET). Based on this observation, an essentially universal, non-Arrhenius temperature dependence for ultrathin oxide is obtained by a natural normalization scheme. The consequences of these findings for reliability projection are discussed.Keywords
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