Pulsed laser-induced SEU in integrated circuits: a practical method for hardness assurance testing
- 1 December 1990
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (6) , 1825-1831
- https://doi.org/10.1109/23.101196
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- SEU characterization of hardened CMOS SRAMs using statistical analysis of feedback delay in memory cellsIEEE Transactions on Nuclear Science, 1989
- Low temperature proton induced upsets in NMOS resistive load static RAMIEEE Transactions on Nuclear Science, 1988
- Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodesIEEE Transactions on Nuclear Science, 1988
- Charge collection from focussed picosecond laser pulsesIEEE Transactions on Nuclear Science, 1988
- Laser Simulation of Single Event UpsetsIEEE Transactions on Nuclear Science, 1987
- The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit UpsetIEEE Transactions on Nuclear Science, 1987
- Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ StructuresIEEE Transactions on Nuclear Science, 1984
- Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test DataIEEE Transactions on Nuclear Science, 1984