The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 539-544
- https://doi.org/10.1007/bf02657960
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beam epitaxyJournal of Applied Physics, 1990
- Minority carrier recombination in p-type CdxHg1-xTeSemiconductor Science and Technology, 1990
- The excess carrier lifetime in p-type HgCdTe measured by photoconductive decayJournal of Applied Physics, 1989
- Surface recombination velocity of anodic sulfide and ZnS coated p-HgCdTeJournal of Vacuum Science & Technology A, 1989
- Photoconductivity lifetime measurements on HgCdTe using a contactless microwave techniqueJournal of Applied Physics, 1988
- Minority carrier lifetime in doped and undoped p-type CdxHg1-xTeSemiconductor Science and Technology, 1987
- Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effectsJournal of Applied Physics, 1985
- Status of point defects in HgCdTeJournal of Vacuum Science & Technology A, 1985
- Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTeJournal of Applied Physics, 1981
- Calculation of the Auger lifetime in p-type Hg1-xCdxTeJournal of Applied Physics, 1981