Analysis and design of low-dimensional structures and devices using strain: I. Hydrostatic pressure effects
- 1 December 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (12) , 1194-1201
- https://doi.org/10.1088/0268-1242/5/12/009
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Resonant tunnelling between X-levels in a GaAs/AlAs/GaAs/AlAs/GaAs device above 13 kbarSolid State Communications, 1990
- The effect of the X conduction band minima on resonant tunnelling and charge build-up in double barrier structures based on n-GaAs/(AlGa)AsSolid-State Electronics, 1989
- Quantized Hall effect and a new field-induced phase transition in the organic superconductor (TMTSFPhysical Review Letters, 1989
- Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressurePhysical Review B, 1989
- Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasersIEEE Journal of Quantum Electronics, 1989
- Characterization and Design of Semiconductor Lasers Using StrainPublished by Springer Nature ,1989
- Hydrostatic and uniaxial pressure coefficients of CdTePhysical Review B, 1988
- Resonant tunneling through GaAs quantum-well energy levels confined by As Γ- and X-point barriersPhysical Review B, 1988
- A reassessment of intervalence band absorption in 1.6μm (GaIn)(AsP)/InPSemiconductor Science and Technology, 1987
- Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriersSemiconductor Science and Technology, 1987