Effects of hydrogen plasma on thin-oxide Si-SiO2structures
- 1 July 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (7) , 686-690
- https://doi.org/10.1088/0268-1242/3/7/009
Abstract
Experiments are presented that suggest that the effect of hydrogen plasma on the properties of Si-SiO2 structures depends on the initial parameters of the structures. Measurements of the inversion channel mobility and of the interface properties of the structures show that the soft H2 plasma (RF power density: 0.1 W cm-2; gas pressure: 133 Pa) causes a degradation of the original dry-thermal-oxide Si-SiO2 structures and anneals structures that have been strongly damaged by previous argon plasma treatment.Keywords
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