InGaAsP/InGaP buried heterostructure lasers at 810 nm
- 1 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (11) , 3086-3087
- https://doi.org/10.1063/1.333865
Abstract
InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 μm wide.This publication has 9 references indexed in Scilit:
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