Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

This publication has 28 references indexed in Scilit:

• High performance AlGaN/GaN HEMT with improved Ohmiccontacts
  Electronics Letters, 1998
• The effect of thermal annealing on the Ni/Au contact of p-type GaN
  Journal of Applied Physics, 1998
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
  Applied Physics Letters, 1997
• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN
  Applied Physics Letters, 1997
• Very low resistance multilayer Ohmic contact to n-GaN
  Applied Physics Letters, 1996
• A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
  Applied Physics Letters, 1996
• High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
  Japanese Journal of Applied Physics, 1995
• Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
  Applied Physics Letters, 1994
• Metal semiconductor field effect transistor based on single crystal GaN
  Applied Physics Letters, 1993
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
  Applied Physics Letters, 1992