Using a neural network to proximity correct patterns written with a Cambridge electron beam microfabricator 10.5 lithography system
- 1 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (14) , 1431-1433
- https://doi.org/10.1063/1.103456
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Neural network approach to proximity effect corrections in electron-beam lithographyPublished by SPIE-Intl Soc Optical Eng ,1990
- A Monte Carlo simulation of damage to the gate oxide of metal-oxide-silicon field-effect transistors from electron beam lithographyJournal of Applied Physics, 1989
- A Monte Carlo simulation of electron beam lithography used to create 0.5-μm structures on GaAsJournal of Vacuum Science & Technology B, 1988
- Characterization of a high-resolution novolak based negative electron-beam resist with 4 μC/cm2 sensitivityJournal of Vacuum Science & Technology B, 1988
- A Proximity Effect Measuring Test Chip - Design And ApplicationPublished by SPIE-Intl Soc Optical Eng ,1987
- Effect of varying the composition of copolymers of glycidyl methacrylate and 3‐chlorostyrene (GMC) on electron lithographic performancePolymer Engineering & Science, 1983
- Energy dissipation in a thin polymer film by electron beam scatteringJournal of Applied Physics, 1974
- Monte Carlo Calculations on Electron Scattering in a Solid TargetJapanese Journal of Applied Physics, 1971