Effect of varying the composition of copolymers of glycidyl methacrylate and 3‐chlorostyrene (GMC) on electron lithographic performance
- 1 December 1983
- journal article
- Published by Wiley in Polymer Engineering & Science
- Vol. 23 (17) , 975-979
- https://doi.org/10.1002/pen.760231711
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- ESR Studies of Negative Electron Resists PGMA and PStJournal of the Electrochemical Society, 1982
- Postirradiation polymerization of e-beam negative resists: Theoretical analysis and method of inhibitionJournal of Vacuum Science and Technology, 1981
- Plasma silicon oxide films on garnet substrates: measurement of their thickness and refractive index by the prism coupling techniqueApplied Optics, 1981
- Oxygen plasma removal of thin polymer filmsPolymer Engineering & Science, 1980
- Contrast in the electron-beam lithography of substituted aromatic homopolymers and copolymersJournal of Vacuum Science and Technology, 1979
- Negative Electron Resists for Direct Device Lithography: II . Poly(Glycidyl Methacrylate‐Co‐3‐Chlorostyrene)—Lithographic PerformanceJournal of the Electrochemical Society, 1979
- Negative Electron Resists for Direct Device Lithography: I . Initial Material SurveyJournal of the Electrochemical Society, 1979
- Chloromethylated Polystyrene as a Dry Etching‐Resistant Negative Resist for Submicron TechnologyJournal of the Electrochemical Society, 1979
- PGMA as a High Resolution, High Sensitivity Negative Electron Beam ResistJapanese Journal of Applied Physics, 1979