Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodes
- 4 August 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (6) , 866-868
- https://doi.org/10.1063/1.1779960
Abstract
Two different approaches to optimize the growth conditions for high-power green light-emitting diodes(LEDs) using Ga 1 − x In x N ∕ Ga N metalorganic vapor phase epitaxy are discussed. We compare typical results in terms of morphology, photo-, and electroluminescence properties. We find good results for an optimization of the lateral morphological homogeneity of the active region. An extension of growth conditions for the active layers of blue LEDs was misleading. This suggests that different emission processes are involved in blue and green LEDs. We achieve die performances of 2.5 mW at 523 nm ( 526 nm dominant) for low forward voltages of 3.4 V at a typical drive current of 20 mA .Keywords
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