MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

This publication has 13 references indexed in Scilit:

• Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
  Applied Physics Letters, 1995
• Hydrogenation of GaN, AlN, and InN
  Applied Physics Letters, 1994
• Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
  Applied Physics Letters, 1994
• Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
  Applied Physics Letters, 1993
• p-type zinc-blende GaN on GaAs substrates
  Applied Physics Letters, 1993
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
  Applied Physics Letters, 1993
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
  Applied Physics Letters, 1993
• Metal semiconductor field effect transistor based on single crystal GaN
  Applied Physics Letters, 1993
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
  Applied Physics Letters, 1993
• Growth and Doping of GaN Films by ECR-Assisted MBE
  MRS Proceedings, 1992