Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Abstract
Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted (001) silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2〈110〉 type. The gettering of oxygen at the nanocavities was demonstrated.

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