Modification of AmBv Semiconductor Layers by Ion Implantation
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 52 references indexed in Scilit:
- Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Nucleation of point defects in low-fluence ion-implanted GaAs and GaPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Investigation of the amorphization process in ion implanted AIIIBV compoundsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Dose rate effects on damage accumulation in Si+-implanted gallium arsenideApplied Physics Letters, 1991
- Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAsPhysica Status Solidi (a), 1986
- Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealingJournal of Applied Physics, 1985
- Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Defect diffusion during ion implantation into GaAsPhysica Status Solidi (a), 1983
- Radiation damage and near edge optical properties of nitrogen implanted gallium arsenidePhysica Status Solidi (a), 1982
- Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAsRadiation Effects, 1980