Effect of oxygen on residual stress and structural properties of tungsten nitride films grown by reactive magnetron sputtering
- 3 July 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 76 (2) , 107-115
- https://doi.org/10.1016/s0921-5107(00)00424-4
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Electrical resistivity, structure and composition of d.c. sputtered WNx filmsThin Solid Films, 1997
- Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallizationJournal of Applied Physics, 1997
- Characterization of low pressure chemically vapor-deposited tungsten nitride filmsThin Solid Films, 1993
- Tungsten nitride thin films prepared by MOCVDJournal of Materials Research, 1993
- Formation of Conductive SrVO3 Films on Si SubstratesJapanese Journal of Applied Physics, 1991
- Oxidation of titanium nitride in room air and in dry O2Journal of Applied Physics, 1991
- Failure mechanisms of TiN thin film diffusion barriersThin Solid Films, 1988
- Resistivity changes and phase evolution in W–N films sputter deposited in Ne–N2 and Ar–N2 dischargesJournal of Vacuum Science & Technology A, 1988
- WNx: Properties and applicationsThin Solid Films, 1987
- Oxygen in titanium nitride diffusion barriersApplied Physics Letters, 1985