Characterization of Mn-doped InAsxP1−x grown by organometallic vapor phase epitaxy
- 4 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1155-1157
- https://doi.org/10.1063/1.99190
Abstract
Epitaxial layers of InAsxP1−x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1−x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0–0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.Keywords
This publication has 12 references indexed in Scilit:
- Epitaxial growth of manganese-doped indium phosphideJournal of Materials Science Letters, 1987
- Electronic and optical properties of Fe-doped InP prepared by organometallic vapor-phase epitaxyJournal of Applied Physics, 1986
- Optical study of the deep manganese acceptor in In1−xGaxP: Evidence for vacuum-level pinningSolid State Communications, 1985
- A universal trend in the binding energies of deep impurities in semiconductorsApplied Physics Letters, 1984
- Transition metal diffusion in InP: Photoluminescence investigationJournal of Applied Physics, 1984
- On the position of energy levels related to transition-metal impurities in III-V semiconductorsJournal of Physics C: Solid State Physics, 1982
- An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InPJournal of Applied Physics, 1982
- Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxySolid-State Electronics, 1980
- Growth and Characterization of Liquid-Phase Epitaxial InAs1−xPxJournal of Applied Physics, 1971
- Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and GePhysical Review B, 1965