Laser-induced degradation of GaAs photoluminescence

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Abstract
We report experimental studies of laser‐induced degradation of surface photoluminescence efficiency in n‐GaAs, p‐GaAs, semi‐insulating Cr‐doped, and undoped liquid‐encapsulated Czochralski‐grown GaAs for excitation intensities ranging from ∼0.1 to ∼20 kW/cm2. The data suggest a contribution from optically induced defects in the bulk material. The time dependence of photoluminescence efficiency was fitted to a simple power‐law expression. A previously unreported fast decay of photoluminescence, occurring in 1–2 s immediately following the cleaving of a fresh surface, was observed in p‐ and n‐type samples.