2-4 GHz monolithic lateral p-i-n photodetector and MESFET amplifier on GaAs-on-Si
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 38 (9) , 1199-1203
- https://doi.org/10.1109/22.58643
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- GaAs-on-Si: a GaAs IC manufacturer's perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Progress in III-V optoelectronic integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- 5.2-GHz bandwidth monolithic GaAs optoelectronic receiverIEEE Electron Device Letters, 1988
- X-Band MMIC amplifier on GaAs/SiIEEE Electron Device Letters, 1987
- Optimum design of a 4-Gbit/s GaAs MESFET optical preamplifierJournal of Lightwave Technology, 1987
- Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET processIEEE Electron Device Letters, 1986
- Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistorElectronics Letters, 1986
- Monolithically integrable lateral PIN detectorsPublished by Optica Publishing Group ,1986
- Receiver design for high-speed optical-fiber systemsJournal of Lightwave Technology, 1984