Characterization of crystal defects at leakage sites in charge-coupled devices
- 1 January 1977
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1) , 412-414
- https://doi.org/10.1063/1.323343
Abstract
Crystal defects have been identified at the sites of high leakage (spikes) in charge-coupled devices operated in the integration mode. Oxidation-induced stacking faults and dislocations were observed using x-ray topography and selective etching, and identified by transmission electron microscopy. Electrical measurements showed that the stacking faults had a range of activity which is attributed to variation in the level of impurity decoration of the defects.This publication has 11 references indexed in Scilit:
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