Self-consistent calculation of the electronic structure of the (110) GaAs-ZnSe interface
- 15 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (2) , 729-733
- https://doi.org/10.1103/physrevb.20.729
Abstract
The abrupt (110) interface of GaAs-ZnSe is studied using the self-consistent pseudopotential method. No interface states are found in the fundamental gap, but interface states do split off from bulk states in some other regions. The band-edge discontinuity found in the present calculation does not satisfy the simple electron affinity rule; the calculated discontinuity of the conduction-band minima is 0.7 eV compared with the electron-affinity difference of 0.02 eV. The role of ionicity in the electronic structure of the interface is discussed.Keywords
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