Influence of thin metallic interlayers on the CdS/InP(110) valence band offset
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 738-745
- https://doi.org/10.1016/0169-4332(92)90330-z
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Influence of Sb and Bi epitaxial monolayers on the metal/GaAs(110) interface formationApplied Surface Science, 1992
- Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipolesPhysical Review B, 1991
- Test of band offset commutativity by photoemission from an i n s i t u grown ZnTe/CdS/ZnTe quantum wellJournal of Vacuum Science & Technology B, 1990
- Controlled modification of heterojunction band lineups by diffusive intralayersJournal of Vacuum Science & Technology A, 1990
- Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipolePhysical Review B, 1990
- Dipole-Induced Changes of the Band Discontinuities at the Si-Si InterfacePhysical Review Letters, 1986
- Heterojunction band discontinuity control by ultrathin intralayersApplied Physics Letters, 1985
- Tunable barrier heights and band discontinuities via doping interface dipoles: An interface engineering technique and its device applicationsJournal of Vacuum Science & Technology B, 1985
- Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxyApplied Physics Letters, 1985
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978