Charging properties of SIPOS used as a passivation layer on silicon
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1) , 125-128
- https://doi.org/10.1016/0167-9317(91)90196-k
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The structure and electrical characteristics of oxidized semi-insulating polycrystalline siliconJournal of Applied Physics, 1990
- Interface Trap Density near Midgap of SIPOS Films Deposited on Crystalline SiliconJournal of the Electrochemical Society, 1988
- Interface effects of SIPOS passivationIEEE Transactions on Electron Devices, 1986
- Density of states at the interface between semi-insulating polycrystalline and single crystal siliconJournal of Applied Physics, 1984
- Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atomsSolid State Communications, 1977