Autodoping of antimony and arsenic in silicon epitaxial layers
- 1 February 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 100 (1) , 9-16
- https://doi.org/10.1016/0040-6090(83)90224-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Autodoping Effects in Silicon EpitaxyJournal of the Electrochemical Society, 1980
- Silicon Epitaxial Wafer with Abrupt Interface by Two‐Step Epitaxial Growth TechniqueJournal of the Electrochemical Society, 1975
- A simple dC/dV measurement method and its applicationsSolid-State Electronics, 1970
- Impurity Distribution in Epitaxial GrowthJournal of Applied Physics, 1965
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962