Ellipsometry for rapid characterization of Si1−xGex layers
- 4 May 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18) , 2225-2227
- https://doi.org/10.1063/1.107037
Abstract
We report on the ability of ellipsometry to rapidly determine the germanium content and the film thickness of Si1−xGex layers deposited on silicon substrates. The technique is used to evaluate thickness on single‐ and for the first time, double‐layer Si/SixGe1−x films. We estimate the refractive index of Si1−xGex from ellipsometry measurements and find that only the real part differs significantly from that of silicon for 0<xx∼0.10.Keywords
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