Preparation of WNx Films and Their Diffusion Barrier Properties in Cu/Si Contact Systems
- 1 April 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (4R)
- https://doi.org/10.1143/jjap.36.2261
Abstract
We prepared thin WN x films with various compositions by reactive sputtering and examined their characterizations and barrier properties applied to Cu/WN x /Si contact systems. The results indicate that the W65N35 barrier, which is in the W2N phase with preferred orientation in the (111) plane, shows excellent barrier properties for Cu metallization. The obtained Cu/W2N/Si system is fairly stable without diffusion and/or reaction even after annealing at 800° C for 1 h. This system stability is speculated to originate from the thermal stability of the W2N film itself, which is chemically inert and scarcely changes in structure due to annealing.Keywords
This publication has 20 references indexed in Scilit:
- Preparation of Ta 2 Al intermetallic compound films and their application as diffusion barriers to Cu penetrationThin Solid Films, 1996
- Diffusion Barrier Effects Against Cu of W-N Layer Formed by Electron Cyclotron Resonance Plasma Nitridation on W LayerJapanese Journal of Applied Physics, 1995
- Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizationsThin Solid Films, 1993
- Performance of W100−xNx diffusion barriers between 〈Si〉 and CuApplied Surface Science, 1991
- W-Re(6 wt.%) and W-Ti(10 wt.%) alloys as diffusion barriers between aluminium and siliconThin Solid Films, 1991
- Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structuresJournal of Applied Physics, 1991
- Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applicationsJournal of Vacuum Science & Technology A, 1991
- The influence of an aluminum overlayer on the interaction of tungsten films with silicon substratesJournal of Vacuum Science & Technology B, 1988
- Investigation of reactively sputtered tungsten nitride as high temperature stable Schottky contacts to GaAsJournal of Vacuum Science & Technology A, 1986
- Sputtered W–N diffusion barriersJournal of Vacuum Science & Technology A, 1985