In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(001) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis
- 1 March 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 161-163, 419-423
- https://doi.org/10.1016/s0168-583x(99)00777-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Hydrogen-Surfactant Mediated Growth of Ge on Si(001)Physical Review Letters, 1998
- Studies on the suppression of Ge segregation during Si overgrowth on Ge(n ML)Si(100) substrates by gas-source MBEJournal of Crystal Growth, 1996
- Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxyApplied Physics Letters, 1994
- Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001)Physical Review B, 1994
- Surfactant-mediated growth of Ge on Si(111)Physical Review B, 1994
- Ge growth on Si using atomic hydrogen as a surfactantApplied Physics Letters, 1994
- Local dimer exchange in surfactant-mediated epitaxial growthPhysical Review Letters, 1992
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Coaxial impact-collision ion scattering spectroscopy (CAICISS): A novel method for surface structure analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988