Crystallographic properties of ZnSe grown by sublimation method
- 31 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 1-5
- https://doi.org/10.1016/0022-0248(89)90595-2
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen SelenideJapanese Journal of Applied Physics, 1987
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVDJournal of Crystal Growth, 1984
- Interface properties of n-ZnSe–p-Ge heterojunctions grown by organometallic chemical vapor depositionJournal of Vacuum Science & Technology B, 1983
- Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor depositionJournal of Applied Physics, 1982
- Molecular beam epitaxial growth of low-resistivity ZnSe filmsApplied Physics Letters, 1979
- Blue electroluminescence from ZnSe diodesJournal of Applied Physics, 1977
- Yellow-light-emitting ZnSe diodeApplied Physics Letters, 1972