Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (5) , 779-786
- https://doi.org/10.1109/16.285031
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- HELENA: a new software for the design of MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTsInternational Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1993
- Determining intrinsic noise parameters of 0.25 μm gate pseudomorphic HEMTElectronics Letters, 1991
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- High-frequency FET noise performance: a new approachIEEE Transactions on Electron Devices, 1989
- Noise modeling and measurement techniques (HEMTs)IEEE Transactions on Microwave Theory and Techniques, 1988
- Microwave Noise Characterization of GaAs MESFET's: Evaluation by On-Wafer Low-Frequency Output Noise Current MeasurementIEEE Transactions on Microwave Theory and Techniques, 1987
- Noise in single injection diodes. I. A survey of methodsJournal of Applied Physics, 1975
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Gate noise in field effect transistors at moderately high frequenciesProceedings of the IEEE, 1963