Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)
- 1 October 1994
- journal article
- surfaces and-multilayers
- Published by Springer Nature in Applied Physics A
- Vol. 59 (4) , 435-439
- https://doi.org/10.1007/bf00331725
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTANuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- In situ detection of rearrangement processes during electron beam annealing of ion implanted InPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Low energy 15N and 14N implantation in chromium analysed by NRA and RBSNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Nitrogen profiles of thin sputtered PVD silicon nitride filmsVacuum, 1993
- On the identification of N dangling bonds in SiN films using x-ray absorption studiesJournal of Applied Physics, 1993
- Characterisation of thin sputtered silicon nitride films by NRA, ERDA, RBS and SEMAnalytical and Bioanalytical Chemistry, 1993
- Modifications of the gallium arsenide crystal surface during annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Hydrogen profiles of thin PVD silicon nitride films using elastic recoil detection analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Analysis for hydrogen by nuclear reaction and energy recoil detectionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Point Defects in Semiconductors IIPublished by Springer Nature ,1983