Investigations of ultrathin silicon nitride layers produced by low-energy ion implantation and EB-RTA
- 1 May 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 89 (1-4) , 362-368
- https://doi.org/10.1016/0168-583x(94)95201-9
Abstract
No abstract availableKeywords
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