Polarization-insensitive superluminescent diode at 1.5 mu m with a tensile-strained-barrier MQW
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (7) , 703-705
- https://doi.org/10.1109/68.145244
Abstract
Polarization-insensitive high-power superluminescent diodes emitting at 1.5- mu m were fabricated by using a tensile-strained-barrier MQW. Polarization difference as low as 5% and 3.8 mW optical power were obtained at 200 mA injection current.<>Keywords
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