A low-temperature wafer bonding technique using patternable materials
- 21 June 2002
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 12 (5) , 611-615
- https://doi.org/10.1088/0960-1317/12/5/315
Abstract
In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm−2 (20.6 MPa), and a spatial resolution of 10 µm, at a layer thickness of up to 100 µm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging. (Some figures in this article are in colour only in the electronic version)Keywords
This publication has 11 references indexed in Scilit:
- Microfluidic systems with on-line UV detection fabricated in photodefinable epoxyJournal of Micromechanics and Microengineering, 2001
- Silicon–glass wafer bonding with silicon hydrophilic fusion bonding technologySensors and Actuators A: Physical, 1999
- Low temperature silicon direct bonding for application in micromechanics: bonding energies for different combinations of oxidesSensors and Actuators A: Physical, 1998
- Wafer-to-wafer bonding for microstructure formationProceedings of the IEEE, 1998
- Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperaturesSensors and Actuators A: Physical, 1998
- Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bondSensors and Actuators A: Physical, 1997
- Low-temperature silicon direct bonding and interface behavioursSensors and Actuators A: Physical, 1995
- Low temperature wafer direct bondingJournal of Microelectromechanical Systems, 1994
- Low-temperature silicon wafer bondingSensors and Actuators A: Physical, 1992
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986