Effects of arsenic ion irradiation on Ti silicide formation
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 413-417
- https://doi.org/10.1016/0168-583x(85)90590-7
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Suppression of lateral diffusion in the Cr-Si system by ion irradiationApplied Physics Letters, 1984
- Arsenic out-diffusion during TiSi2 formationApplied Physics Letters, 1984
- Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formationPhysical Review B, 1984
- Pile up of implanted phosphorus during palladium silicide formation and the characteristics of Schottky barrier diodesJournal of Applied Physics, 1983
- Chemical effects in ion mixing of transition metals on SiO2Nuclear Instruments and Methods in Physics Research, 1983
- A Self-Aligned Mo-Silicide FormationJapanese Journal of Applied Physics, 1983
- Resistivities of Thin Film Transition Metal SilicidesJournal of the Electrochemical Society, 1982
- Modification of nickel silicide formation by oxygen implantationNuclear Instruments and Methods, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978